| 1. | 1 advanced ag610 rapid thermal processing system
高级的ag610快速退火炉系统 |
| 2. | Design of rapid thermal processing for ions implanted silicon
快速退火炉离子注入退火工艺设计 |
| 3. | Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。 |
| 4. | The influence of rapid thermal process in different gases on the photoluminescence properties of porous silicon was discussed
同时研究了在不同气氛下的快速热处理( rtp )对多孔硅发光特性的影响。 |
| 5. | The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通过对已经过两步（低高）退火的大直径直拉矽单晶片进行高温快速热处理，研究矽中氧沈淀被高温快速热处理消融的情况。 |
| 6. | Four blue light emission peaks were found in the pl spectra of porous silicon which was subjected to rapid thermal process ( rtp ) . similar results can be got after porous silicon samples were subjected to rtp in different gases
结果表面，在不同的气氛中（ n 》 o ） ar ，空气）中rtp处理后，均可得到多孔硅的蓝光发射，而且具有很好的重复性。 |
| 7. | By rapid thermal processing ( rtp ) , high active atoms are excited while decomposing the gel precursor film , and consequently , much more contents of crystalline phase are obtained even at relatively lower temperature
通过快速热处理方法，在凝胶分解过程中得到的高活性离子直接形成晶相，可以在较低的温度下形成晶相及得到相应更多的晶体含量。 |
| 8. | With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ) , rtp ( rapid thermal process ) , which consumes less time and less energy than classical thermal treatments , have been widely employed in semiconductor manufacturing . however , the most importance is that rtp is applied for defects engineering of silicon material . it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer , and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
随着大规模集成电路( vlsi )和超大规模集成电路的发展，节省时间、节省能量、容易控制的快速热退火工艺在半导体器件制造工艺中得到了广泛的应用，并且在硅材料的缺陷工程中发挥了特殊的作用，人们通过高温快速热处理在硅片中引入空位，并控制空位的分布，进而形成了具有较强内吸杂能力的洁净区。 |
